NVE Corp
NASDAQ:NVEC
NVE Corp
Interest Expense
NVE Corp
Interest Expense Peer Comparison
Competitors Analysis
Latest Figures & CAGR of Competitors
| Company | Interest Expense | CAGR 3Y | CAGR 5Y | CAGR 10Y | ||
|---|---|---|---|---|---|---|
|
NVE Corp
NASDAQ:NVEC
|
Interest Expense
N/A
|
CAGR 3-Years
N/A
|
CAGR 5-Years
N/A
|
CAGR 10-Years
N/A
|
|
|
Micron Technology Inc
NASDAQ:MU
|
Interest Expense
$433m
|
CAGR 3-Years
30%
|
CAGR 5-Years
17%
|
CAGR 10-Years
1%
|
|
|
Intel Corp
NASDAQ:INTC
|
Interest Expense
$1.1B
|
CAGR 3-Years
30%
|
CAGR 5-Years
12%
|
CAGR 10-Years
12%
|
|
|
NVIDIA Corp
NASDAQ:NVDA
|
Interest Expense
$247m
|
CAGR 3-Years
-2%
|
CAGR 5-Years
11%
|
CAGR 10-Years
18%
|
|
|
Broadcom Inc
NASDAQ:AVGO
|
Interest Expense
$3.2B
|
CAGR 3-Years
23%
|
CAGR 5-Years
13%
|
CAGR 10-Years
33%
|
|
|
Advanced Micro Devices Inc
NASDAQ:AMD
|
Interest Expense
$131m
|
CAGR 3-Years
14%
|
CAGR 5-Years
23%
|
CAGR 10-Years
-2%
|
|
NVE Corp
Glance View
NVE Corp. engages in the development and sale of devices that use spintronics, a nanotechnology that relies on electron spin rather than electron charge to acquire, store, and transmit information. The company is headquartered in Eden Prairie, Minnesota and currently employs 44 full-time employees. The firm manufactures spintronic products, including sensors and couplers that are used to acquire and transmit data. The firm has also licensed its spintronic magnetoresistive random access memory technology (MRAM). Its parts are found Industrial, scientific, and medical applications, as well as the Industrial Internet of Things. The firm's products include sensor, coupler, and MRAM product. Its sensor products detect the strength or gradient of magnetic fields and are often used to determine position or speed. Its spintronic couplers combine a giant magnetoresistance (GMR) sensor element and a microscopic coil. MRAM uses spintronics to store data. The company combines the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM) and the nonvolatility of flash memory.